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| SEMICONDUCTOR TECHNICAL DATA RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLICATION. KTC3551T EPITAXIAL PLANAR NPN TRANSISTOR E FEATURES Adoption of MBIT Processes. Large Current Capacitance. Low Collector-to-Emitter Saturation Voltage. A G K B DIM A B 2 3 C D MILLIMETERS _ 2.9 + 0.2 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 D Ultrasmall Package Facilitates Miniaturization in end Products. High Allowable Power Dis sipation. Complementary to KTA1551T. C L G High-Speed Switching. 1 E F G H I J K L J CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse SYMBOL VCBO VCES VCEO VEBO IC ICP IB PC * Tj Tstg 0.8 RATING 80 80 50 5 1.0 3 200 0.9 150 -55 150 ) UNIT V V V A mA W 1. EMITTER 2. BASE 3. COLLECTOR Marking Lot No. Type Name * Package mounted on a ceramic board (600 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance Turn-On Time Switching Time SYMBOL ICBO IEBO V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO VCE(sat)1 VCE(sat)2 VBE(sat) hFE fT Cob ton INPUT TEST CONDITION VCB=40V, IE=0 VEB=4V, IC=0 IC=10 A, IE=0 IC=100 A, VBE=0 IC=1mA, IB=0 IE=10 A, IC=0 IC=500mA, IB=10mA IC=300mA, IB=6mA IC=500mA, IB=10mA VCE=2V, IC=100mA VCE=10V, IC=300mA VCB=10V, f=1MHz PW=20s DC < 1% = IB1 I B2 RB RL OUTPUT MIN. 80 80 50 5 200 - Storage Time tstg 50 VR 100F 470F VCC =25V Fall Time tf V BE =-5V 20IB1=-20IB2=IC =500mA 2001. 6. 28 Revision No : 0 I MAXIMUM RATING (Ta=25 ) F H J TSM HK TYP. 130 90 0.81 420 6 35 MAX. 0.1 0.1 190 135 1.2 560 MHz pF UNIT A A V V V V mV mV V - 330 - nS - 40 - 1/3 KTC3551T I C - V CE 1K 50mA h FE - I C 10mA COLLECTOR CURRENT I C (A) 20m A 800 600 400 200 0 6mA 4mA 2mA DC CURRENT GAIN h FE 30mA 40mA 1K 8mA 500 300 Ta=75 C Ta=25 C Ta=-25 C 100 50 30 VCE =2V IB=0mA 0 0.2 0.4 0.6 0.8 1.0 10 0.01 0.03 0.1 0.3 1.0 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (A) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) I C /I B =20 VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1 0.5 0.3 I C /I B =50 1 0.5 0.3 0.1 0.05 0.03 Ta C =75 Ta 5 =-2 C 0.1 0.05 0.03 5 Ta=7 C Ta=25 C 25 Ta=- C C 25 Ta= 0.01 0.01 0.03 0.1 0.3 1 0.01 0.01 0.03 0.1 0.3 1 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) VBE(sat) - I C 10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) 5 3 COLLECTOR CURRENT I C (A) I C /I B =50 I C - V BE 1.0 0.9 0.8 0.7 0.6 Ta=7 5C Ta=2 5C VCE =2V Ta=-25 C Ta=25 C Ta=75 C 0.5 0.4 0.3 0.2 0.1 0 0 0.2 0.4 0.5 0.3 0.1 0.01 0.03 0.1 0.3 1 0.6 0.8 Ta=-2 5C 1 1.0 1.2 COLLECTOR CURRENT I C (A) BASE-EMITTER VOLTAGE V BE (V) 2001. 6. 28 Revision No : 0 2/3 KTC3551T f T - IC TRANSITION FREQUENCY f T (MHz) 5K 3K COLLECTOR OUTPUT CAPACITANCE C ob (pF) VCE =10V C ob - V CB 100 50 30 f=1MHz 1K 500 300 10 5 3 100 50 0.01 0.03 0.1 0.3 1 1 0.1 0.3 1 3 10 30 100 COLLECTOR-BASE VOLTAGE VCB (V) COLLECTOR CURRENT I C (A) SAFE OPERATING AREA 5 3 COLLECTOR CURRENT I C (A) 1 0.5 0.3 Pc - Ta I C MAX.(PULSED) COLLECTOR POWER DISSIPATION PC (W) 1.2 MOUNTED ON A 10 0 50 S* 0 1m I C MAX (CONTINUOUS) D C O PE S* 1.0 0.8 0.6 0.4 0.2 0 CERAMIC BOARD (600mm 2 0.8mm) S* 10 m S* 10 RA TI O S* 0m 0.1 0.05 0.03 0.01 0.1 * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm) N 0 20 40 60 80 100 120 140 160 0.3 1 3 10 30 100 AMBIENT TEMPERATURE Ta ( C) COLLECTOR-EMITTER VOLTAGE VCE (V) 2001. 6. 28 Revision No : 0 3/3 |
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